The PD85015-E is a common source N-channel, enhancement-mode, lateral field-effect RF power transistor. It is designed for high gain, broadband,commercial and industrial applications. It operates at 13.6 V in common source mode at frequencies of up to 1 GHz. The PD85015-E boasts excellent gain, linearity and reliability thanks to ST’s latest LDMOS technology mounted on the first true SMD plastic RF power package,the PowerSO-10RF. The superior linearity of the device makes it an ideal solution for car radios.The PowerSO-10 plastic package, designed for high reliability, is the first JEDEC approved, high power SMD package from ST. It is optimized for RF requirements, and offers excellent RF performance and ease of assembly.

FEATURES:

1. Excellent thermal stability
2. Common source configuration
3. POUT = 15 W with 16 dB gain @ 870 MHz /13.6 V
4. Plastic package
5. ESD protection
6. In compliance with the 2002/95/EC European directive

SPECIFICATIONS:

1. Transistor Polarity: N-Channel
2. Id – Continuous Drain Current: 5 A
3. Vds – Drain-Source Breakdown Voltage: 40 V
4. Gain: 16 dB at 870 MHz
5. Output Power: 15 W
6. Maximum Operating Temperature: + 150 C
7. Package/Case: PowerSO-10RF (Formed Lead)-4
8. Channel Mode: Enhancement
9. Minimum Operating Temperature: – 65 C
10. Operating Frequency: 1 GHz
11. Pd – Power Dissipation: 59 W
12. Vgs – Gate-Source Voltage: 15 V

RELATED DOCUMENTS:

1. Datasheet.

PACKAGE INCLUDES:

1. 1 X N-Channel RF Mosfet Power Transistor PD85015-E